
工作原理:在传统沟槽MOSFET基础上,于沟槽底部引入与源极同电位的屏蔽栅结构。
主要特点:作为先进的MOSFET器件,相比普通沟槽MOSFET,具有更低的导通电阻和开关损耗,能突破传统硅极限。
典型应用:作为中低压功率MOSFET的主流器件,广泛用于手机快充、电机驱动和电源管理等。
| Part Number | Channel | Package | Vds(V) | Vgs(V)± | Id(A) | Vth(V) / Min | Vth(V) / Typ | Vth(V) / Max | Rdson_10V(mΩ) / Typ | Rdson_10V(mΩ) / Max | Rdson_4.5V(mΩ) / Typ | Rdson_4.5V(mΩ) / Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SEM100GDN40D5 | Dual-N | PDFN5*6-8 | 100 | ±20 | 40 | 1.6 | 2 | 2.4 | 14 | 16 | 20 | 23 |
| SEM30GLN45DN3 | Dual-N | DFN3*3-10 | 30 | ±20 | 45 | 1 | 1.5 | 2 | 5.5 | 7.2 | 7.6 | 10 |
| SEM30GLN55D5 | Dual-N | PDFN5*6-8D | 30 | ±20 | 45 | 1 | 1.5 | 2.2 | 5 | 6.5 | 7.9 | 10.5 |
| SEM30GLN55D5 | Dual-N | PDFN5*6-8D | 30 | ±20 | 60 | 1 | 1.5 | 2.2 | 3.5 | 4.3 | 5 | 6.9 |
| SEM30GLN90D5 | Dual-N | PDFN5*6-8D | 30 | ±20 | 150 | 1 | 1.5 | 2.2 | 1.9 | 2.4 | 2.6 | 3.7 |
| SEM30GLN90D5 | Dual-N | PDFN5*6-8D | 30 | ±20 | 50 | 1 | 1.7 | 2.4 | 4.1 | 5.6 | 6 | 8.2 |
| SEM100GN40T2 | N-ch MOS | TO-252 | 100 | ±20 | 40 | 1 | 1.5 | 2 | 14.4 | 18.7 | 17.7 | 23 |
| SEM30GN45D3 | N-ch MOS | PDFN3.3*3.3-8 | 30 | ±20 | 45 | 1 | 1.5 | 2.2 | 4.9 | 6.5 | 7.8 | 10.5 |
| SEM40GN45D3 | N-ch MOS | PDFN3.3*3.3-8 | 40 | ±20 | 45 | 1 | 1.5 | 2 | 6.4 | 7.5 | 9.1 | 11.8 |
| SEM30GN45D5 | N-ch MOS | PDFN5*6-8 | 30 | ±20 | 45 | 1 | 1.5 | 2.2 | 4.9 | 6.5 | 7.8 | 10.5 |
| SEM40GN50D3 | N-ch MOS | PDFN3.3*3.3-8 | 40 | ±20 | 50 | 1 | 1.55 | 2 | 4.5 | 6 | 6.2 | 8.2 |
| SEM30GN50D3 | N-ch MOS | PDFN3.3*3.3-8 | 30 | ±20 | 50 | 1.2 | 2 | 2.4 | 4.3 | 5.6 | 6.5 | 8.5 |
| SEM40GN50D5 | N-ch MOS | PDFN5*6-8 | 40 | ±20 | 50 | 1 | 1.55 | 2 | 4.5 | 6 | 6.2 | 8.2 |
| SEM30GN50D5 | N-ch MOS | PDFN5*6-8 | 30 | ±20 | 50 | 1.2 | 2 | 2.4 | 4.3 | 5.6 | 6.5 | 8.5 |
| SEM30GN60D3 | N-ch MOS | PDFN3.3*3.3-8 | 30 | ±20 | 60 | 1 | 1.5 | 2.2 | 3.4 | 4.4 | 5 | 6.9 |
| SEM30GN60D5 | N-ch MOS | PDFN5*6-8 | 30 | ±20 | 60 | 1 | 1.5 | 2.2 | 3.4 | 4.4 | 5 | 6.5 |
| SEM30GN60D5L | N-ch MOS | PDFN5*6-8 | 30 | ±20 | 60 | 1 | 1.6 | 2 | 4.1 | 6 | 7 | 10 |
| SEM40GN90D5 | N-ch MOS | PDFN5*6-8 | 40 | ±20 | 90 | 1.2 | 1.8 | 2.4 | 3.2 | 4 | 4.2 | 5.2 |
| SEM100GN90D5 | N-ch MOS | PDFN5*6-8 | 100 | ±20 | 90 | 1.3 | 1.5 | 3 | 6.8 | 8 | 7.8 | 11.4 |
| SEM30GN120D3 | N-ch MOS | PDFN3.3*3.3-8 | 30 | ±20 | 120 | 1 | 1.8 | 2.2 | 1.68 | 2.4 | 2.8 | 3.7 |
| SEM30GN150D5 | N-ch MOS | PDFN5*6-8 | 30 | ±20 | 150 | 1 | 1.8 | 2.2 | 1.68 | 2.4 | 2.8 | 3.7 |
| SEM100GN165D5 | N-ch MOS | PDFN5*6-8 | 100 | ±20 | 165 | 1 | 1.5 | 2 | 2.5 | 3.2 | 2.9 | 4 |
| SEM40GN320D5 | N-ch MOS | - | 40 | ±20 | 320 | 1.1 | 1.7 | 2.4 | 0.97 | 1.26 | 1.25 | 1.63 |
| SEM100N03S2G | N-ch MOS | SOT-23 | 100 | ±20 | 3 | - | 1.8 | 3 | 110 | 140 | 160 | 300 |